搜索筛选:
搜索耗时0.0756秒,为你在为你在102,285,761篇论文里面共找到 2 篇相符的论文内容
发布年度:
,The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI
[期刊论文] 作者：CHANG Jian-Guang,WU Chun-Bo,JI Xiao-Li,MA Hao-Wen,YAN Feng,SHI Yi,ZHANG Rong,
来源：中国物理快报（英文版） 年份：2012
We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization impl...
,Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90
[期刊论文] 作者：XU Yue,VAN Feng,CHEN Dun-Jun,SHI Yi,WANG Yong-Gang,LI Zhi-Guo,YANG Fan,WANG Jos-Hua,LIN Peter,CHANG Jian-Guang,
来源：中国物理快报（英文版） 年份：2010
...
相关搜索：
