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,Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/C
[期刊论文] 作者：CHU Fu-Tong,CHEN Chao,ZHOU Wei,LIU Xing-Zhao,
来源：中国物理快报（英文版） 年份：2013
The breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) is enhanced by employing metal chromium (Cr) nanoparticle-embedded polyimide (PI)...
,Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organi
[期刊论文] 作者：Wang Ze-Gao,Chen Yuan-Fu,Chen Cao,Tian Ben-Lang,Chu Fu-Tong,Liu Xing-Zhao,Li Yan-Rong,
来源：中国物理B（英文版） 年份：2010
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