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[会议论文] 作者：J.Yang,D.G.Zhao,D.S.Jiang,P.Chen,
来源：第十五届全国固体薄膜学术会议 年份：2016
InGaN based material and their metal organic chemical vapor deposition(MOCVD)growth technology have attracted a great attention for their successful application in light emitting devices....
[会议论文] 作者：L.C.Le,J.J.Zhu,H.Wang,S.M.Zhang,H.Yang,D.G.Zhao,D.S.Jiang,L.Li,L.L.Wu,P.Chen,Z.S.Liu,Z.C.Li,Y.M.Fan,
来源：第十四届全国固体薄膜学术会议 年份：2014
The effect of quantum well (QW) number on performances of InGaN/GaN MQW LEDs has been investigated.It is observed that V-defects increase in density and averaged size with more periods of QWs, resulti...
[会议论文] 作者：L.C.Le[1]J.J.Zhu[2]H.Wang[2]S.M.Zhang[2]H.Yang[3]D.G.Zhao[1]D.S.Jiang[1]L.Li[1]L.L.Wu[1]P.Chen[1]Z.S.Liu,
来源：第十四届全国固体薄膜学术会议 年份：2014
The effect of quantum well (QW) number on performances of InGaN/GaN MQW LEDs has been investigated.It is observed that V-defects increase in density and ave...
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