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,Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice t
[期刊论文] 作者：Jiang-Dong Gao,Jian-Li Zhang,Zhi-Jue Quan,Jun-Lin Liu,Feng-Yi Jiang,
来源：中国物理B（英文版） 年份：2020
It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temper-ature increasing. The effect of lattice t...
,Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silico
[期刊论文] 作者：Jiao-Xin Guo,Jie Ding,Chun-Lan Mo,Chang-Da Zheng,Shuan Pan,Feng-Yi Jiang,
来源：中国物理B（英文版） 年份：2020
The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes (LEDs) grown on silicon su...
[期刊论文] 作者：Jia-Ming Zeng,Xiao-Lan Wang,Chun-Lan Mo,Chang-Da Zheng,Jian-Li Zhang,Shuan Pan,Feng-Yi Jiang,
来源：中国物理快报（英文版） 年份：2020
The effect of growth temperature of barriers on photoelectric properties of GaN-based yellow light emitting diodes (LEDs) is investigated.It is found that as th...
[期刊论文] 作者：Tian-Ran Zhang,Fang Fang,Xiao-Lan Wang,Jian-Li Zhang,Xiao-Ming Wu,Shuan Pan,Jun-Lin Liu,Feng-Yi Jiang,
来源：中国物理B（英文版） 年份：2019
GaN-based yellow light-emitting diodes (LEDs) on Si substrates are aged at a direct current density of 50 A/cm2 for 500 h. After the aging process, it can be fo...
,Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs w
[期刊论文] 作者：Ai-Xing Li,Chun-Lan Mo,Jian-Li Zhang,Xiao-Lan Wang,Xiao-Ming Wu,Guang-Xu Wang,Jun-Lin Liu,Feng-Yi Jiang,
来源：中国物理快报（英文版） 年份：2018
InGaN-based green light-emitting diodes (LEDs) with and without Mg-preflow before the growth of p-AIGaN electron blocking layer (EBL) are investigated experimen...
[期刊论文] 作者：,Xiao-Lan Wang,Jun-Lin Liu,Jian-Li Zhang,Chun-Lan Mo,Chang-Da Zheng,Xiao-Ming Wu,Guang-Xu Wang,Feng-Yi Jiang,
来源：中国物理快报（英文版） 年份：2018
InGaN-based green light-emitting diodes (LEDs) with different green quantum well numbers grown on Si (111) substrates by metal organic chemical vapor deposition...
,Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Gr
[期刊论文] 作者：Chun-lan Mo,Jun-lin Liu,Jian-li Zhang,Xiao-lan Wang,Xiao-ming Wu,Long-quan Xu,Jie Ding,Guang-xu Wang,Feng-yi Jiang,
来源：中国物理快报（英文版） 年份：2018
A blue emission originated from InGaN/GaN superlattice (SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells (QWs),revealing...
,The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on S
[期刊论文] 作者：Chun-Lan Mo,Xiao-Lan Wang,Jie Ding,Guang-Xu Wang,Shuan Pan,Jian-Li Zhang,Xiao-Ming Wu,Jun-Lin Liu,Feng-Yi Jiang,
来源：中国物理快报（英文版） 年份：2017
InGaN-based green light-emitting diodes (LEDs) with different growth temperatures of superlattice grown on Si (111) substrates are investigated by temperature-d...
,Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quant
[期刊论文] 作者：Zhi-jue Quan,Chang-da Zheng,Xiao-ming Wu,Shuan Pan,Guang-xu Wang,Jie Ding,Long-quan Xu,Jun-lin Liu,Feng-yi Jiang,
来源：中国物理快报（英文版） 年份：2018
Effect of hydrogen (H2) treatment during the GaN barrier growth on the electroluminescence performance of green InGaN/GaN single-quantum-well light-emitting dio...
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