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[期刊论文] 作者：Han De-Dong,Liu Xiao-Yan,Kang Jin-Feng,Xia Zhi-Liang,Du Gang,Han Ru-Qi,
来源：中国物理（英文版） 年份：2005
In this study, Ni germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Ni on Ge, followed by annealing in N2 atmosphere...
[期刊论文] 作者：Han De-Dong,Kang Jin-Feng,Liu Xiao-Yan,Sun Lei,Luo Hao,Han Ru-Qi,
来源：中国物理（英文版） 年份：2007
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a fuace annealing. The...
[期刊论文] 作者：SUN Bing,LIU Li-Feng,HAN De-Dong,WANG Yi,LIU Xiao-Yan,HAN Ru-Qi,KANG Jin-Feng,
来源：中国物理快报（英文版） 年份：2008
Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reprodu...
[期刊论文] 作者：LI Shao-Juan,HE Xin,HAN De-Dong,SUN Lei,WANG Yi,HAN Ru-Qi,CHAN Man-Sun,ZHANG Sheng-Dong,
来源：中国物理快报（英文版） 年份：2012
The structural and electrical properties of ZnO films deposited by reactive radiofrequency sputtering with a metallic zinc target are systematically investigate...
[期刊论文] 作者：Han De-Dong(韩德栋),Kang Jin-Feng(康晋锋),Lin Chang-Hai(林长海),Han Ru-Qi(韩汝琦),
来源：中国物理（英文版） 年份：2003
Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmo...
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