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[期刊论文] 作者:LIU Caichi,HAO Qiuyan,ZHANG Ji, 来源:北京科技大学学报 年份:2006
[期刊论文] 作者:Sun Shilong Hao Qiuyan Zhao L, 来源:中国稀土学报:英文版 年份:2006
Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing...
[期刊论文] 作者:Sun Shilong,Hao Qiuyan,Zhao Li, 来源:稀土学报(英文版) 年份:2004
Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing...
[期刊论文] 作者:LIU Caichi,HAO Qiuyan,ZHANG Ji, 来源:稀有金属(英文版) 年份:2004
The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optic...
[期刊论文] 作者:Ren Bingyan,Liu Caichi,Hao Qiuyan,Zhang Zhicheng,Wang Haiyun, 来源:稀有金属(英文版) 年份:2000
New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. Their annealing behavior was studied...
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