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[期刊论文] 作者：HengzeQu，ZiweiLin，RuijuanGuo，XiyuMing，WenhanZhou，ShiyingGuo，XiufengSong，ShengliZhang，HaiboZeng，HengzeQu,
来源：半导体学报（英文版） 年份：2020
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[期刊论文] 作者：HengzeQu,ZiweiLin,RuijuanGuo,XiyuMing,WenhanZhou,ShiyingGuo,XiufengSong,ShengliZhang,HaiboZeng,
来源：JournalofSemiconductors 年份：2020
Two-dimensional material has been regarded as a competitive silicon-alternative with a gate length approaching sub-10 nm, due to its unique atomic thickness and outstanding electronic properties. Herein, we provide a comprehensively study o......
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