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[期刊论文] 作者:Li-Fan Wu,Yu-Ming Zhang,Hong-Liang Lv,Yi-Men Zhang,
来源:中国物理B(英文版) 年份:2016
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[期刊论文] 作者:Shi-Zheng Yang,Hong-Liang Lv,Yu-Ming Zhang,Yi-Men Zhang,Bin Lu,Si-Lu Yan,
来源:中国物理B(英文版) 年份:2018
In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar tr...
,Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/Al
[期刊论文] 作者:Jing Zhang,Hong-Liang Lv,Hai-Qiao Ni,Shi-Zheng Yang,Xiao-Ran Cui,Zhi-Chuan Niu,Yi-Men Zhang,Yu-Ming Zhang,
来源:中国物理B(英文版) 年份:2019
The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied.The step-grade...
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