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[期刊论文] 作者：Qi-Wei Li,Jing Sun,Fu-Xing Li,Chang-Chun Chai,Jun Ding,Jin-Yong Fang,
来源：中国物理B（英文版） 年份：2021
The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor (pHEMT) under the ir-radiation of C band high-power microwave (HPM) is investigated in this paper.Based on the theoretical analysis,the thermoelectric......
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