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[会议论文] 作者：LI,Dong-Hong,DIAO,Jun-Lin,LIU,Jian-Chang,
来源：中国化学会第六届有机化学学术会议 年份：2009
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,Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice t
[期刊论文] 作者：Jiang-Dong Gao,Jian-Li Zhang,Zhi-Jue Quan,Jun-Lin Liu,Feng-Yi Jiang,
来源：中国物理B（英文版） 年份：2020
It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temper-ature increasing. The effect of lattice t...
Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-p
[期刊论文] 作者：Quan-Jiang Lv,Yi-Hong Zhang,Chang-Da Zheng,Jiang-Dong Gao,Jian-Li Zhang,Jun-Lin Liu,
来源：中国物理B（英文版） 年份：2020
Inhomogeneous electroluminescence (EL) of InGaN green LEDs grown on mesh-patterned Si (111) substrate had been investigated.Sample with n-AlGaN inserted between...
[期刊论文] 作者：Tian-Ran Zhang,Fang Fang,Xiao-Lan Wang,Jian-Li Zhang,Xiao-Ming Wu,Shuan Pan,Jun-Lin Liu,Feng-Yi Jiang,
来源：中国物理B（英文版） 年份：2019
GaN-based yellow light-emitting diodes (LEDs) on Si substrates are aged at a direct current density of 50 A/cm2 for 500 h. After the aging process, it can be fo...
,Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs w
[期刊论文] 作者：Ai-Xing Li,Chun-Lan Mo,Jian-Li Zhang,Xiao-Lan Wang,Xiao-Ming Wu,Guang-Xu Wang,Jun-Lin Liu,Feng-Yi Jiang,
来源：中国物理快报（英文版） 年份：2018
InGaN-based green light-emitting diodes (LEDs) with and without Mg-preflow before the growth of p-AIGaN electron blocking layer (EBL) are investigated experimen...
[期刊论文] 作者：严军林，刘静，陈希，房喻，YAN,Jun-Lin，LIU,Jing，CHEN,Xi，FANG,Yu,
来源：黑龙江科技信息 年份：2007
本文通过对荣华二采区10...
[期刊论文] 作者：Zhi-Hui Wang,Xiao-Lan Wang,Jun-Lin Liu,Jian-Li Zhang,Chun-Lan Mo,Chang-Da Zheng,Xiao-Ming Wu,Guang-Xu,
来源：中国物理快报（英文版） 年份：2018
InGaN-based green light-emitting diodes (LEDs) with different green quantum well numbers grown on Si (111) substrates by metal organic chemical vapor deposition...
[期刊论文] 作者：Dong Jia-Fu,Shi Bing-Ren,Li Wei,Luo Jun-Lin,Liu Yi,Fu Bing-Zhong,Dong Yun-Bo,Xiao Zheng-Gui,Zheng Yin-Jia,
来源：中国物理（英文版） 年份：2004
Strong drop of Hα emission has been observed on the HL-1M tokamak by means of a detector array while a pellet crosses the q=1 surface. In this article, the q=1...
,Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Gr
[期刊论文] 作者：Xi-xia Tao,Chun-lan Mo,Jun-lin Liu,Jian-li Zhang,Xiao-lan Wang,Xiao-ming Wu,Long-quan Xu,Jie Ding,Guang-xu,
来源：中国物理快报（英文版） 年份：2018
A blue emission originated from InGaN/GaN superlattice (SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells (QWs),revealing...
,The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on S
[期刊论文] 作者：Long-Quan Xu,Chun-Lan Mo,Xiao-Lan Wang,Jie Ding,Guang-Xu Wang,Shuan Pan,Jian-Li Zhang,Xiao-Ming Wu,Jun-Lin Liu,
来源：中国物理快报（英文版） 年份：2017
InGaN-based green light-emitting diodes (LEDs) with different growth temperatures of superlattice grown on Si (111) substrates are investigated by temperature-d...
,Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quant
[期刊论文] 作者：Xiao-lan Wang,Zhi-jue Quan,Chang-da Zheng,Xiao-ming Wu,Shuan Pan,Guang-xu Wang,Jie Ding,Long-quan Xu,Jun-lin Liu,
来源：中国物理快报（英文版） 年份：2018
Effect of hydrogen (H2) treatment during the GaN barrier growth on the electroluminescence performance of green InGaN/GaN single-quantum-well light-emitting dio...
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