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TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantatio
[期刊论文] 作者：Junji Yamanaka,Shigenori Inoue,
来源：材料科学与化学工程(英文) 年份：2017
Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carri...
[期刊论文] 作者：Junji Yamanaka,Chiaya Yamamoto,
来源：材料科学与化学工程(英文) 年份：2017
We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating techn...
TEM and STEM Observations of a Flat Continuous Silicon-Germanium Thin Film Epitaxially Grown on Poro
[期刊论文] 作者：Junji Yamanaka,Noritaka Usami,,
来源：材料科学与化学工程(英文) 年份：2017
Strain-relaxed SiGe is an attractive material for use as a substrate of strained Si, in which carrier mobility is higher than that of bulk Si. The concept of th...
[期刊论文] 作者：Junji Yamanaka,Mai Shirakura,C,
来源：材料科学与化学工程(英文) 年份：2018
Lattice-strained Si thin films grown onto SiGe(110)/Si(110) are attracting because of their potential to realize high-speed transistors. In this study we observ...
Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe/Si (110) Using STEM Moir&
[期刊论文] 作者：Junji Yamanaka,Mai Shirakura,C,
来源：材料科学与化学工程(英文) 年份：2018
A moiré between crystal lattice planes and scanning electron beam-lines formed in a scanning transmission electron microscope includes the information of t...
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