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,Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann eq
[期刊论文] 作者：Xia Zhi-Liang,Du Gang,Liu Xiao-Yan,Kang Jin-Feng,Han Ru-Qi,
来源：中国物理（英文版） 年份：2007
This paper investigates gate current through ultra-thin gate oxide of nano-scale metal oxide semiconductor field effect transistors (MOSFETs), using two-dimensi...
[期刊论文] 作者：Song Yun-Cheng,Liu Xiao-Yan,Du Gang,Kang Jin-Feng,Han Ru-Qi,
来源：中国物理B（英文版） 年份：2008
We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carrie...
,Degradation Characteristics of Resistive Switching Memory Devices Correlated with Electric Field In
[期刊论文] 作者：LIU Rui,QIU Gang,CHEN Bing,GAO Bin,KANG Jin-Feng,
来源：中国物理快报（英文版） 年份：2013
The electrode effect of resistive switching memory devices on resistive switching behaviors is studied.Compared to TiN-or Ti-electrode devices,significantly red...
,Vacuum Annealing Induced Room-Temperature Ferromagnetism in Co0.1 Ti0.9 O2-δ Films Prepared by Sol-
[期刊论文] 作者：LIU Li-Feng,KANG Jin-Feng,WANG Yi,ZHANG Xing,HAN Ru-Qi,
来源：中国物理快报（英文版） 年份：2008
The Co-doped TiO,2 films (Co,0.1 Ti,0.9 O,2-δ) are prepared on silicon substrates by sol-gel method and post annealing. The Co,0.1 Ti,0.9 O,2-δ film annealed...
,Monte Carlo simulation of in-plane spin-polarized transport in GaAs/GaAlAs quantum well in the thre
[期刊论文] 作者：Kong Ling-Gang,Liu Xiao-Yan,Du Gang,Wang Yi,Kang Jin-Feng,Han Ru-Qi,
来源：中国物理（英文版） 年份：2006
We develop a Monte Carlo (MC) tool incorporated with the three-subband approximation model to investigate the inplane spin-polarized transport in GaAs/GaAlAs qu...
[期刊论文] 作者：Han De-Dong,Liu Xiao-Yan,Kang Jin-Feng,Xia Zhi-Liang,Du Gang,Han Ru-Qi,
来源：中国物理（英文版） 年份：2005
In this study, Ni germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Ni on Ge, followed by annealing in N2 atmosphere...
[期刊论文] 作者：Ji Min,Zhao Kai,Du Gang,Kang Jin-Feng,Han Ru-Qi,Liu Xiao-Yan,
来源：中国物理B（英文版） 年份：2008
The Monte Carlo simulation is performed to investigate the quantum mechanical (QM) effects on heat generation in nano-scale metal oxide semiconductor field effe...
[期刊论文] 作者：Han De-Dong,Kang Jin-Feng,Liu Xiao-Yan,Sun Lei,Luo Hao,Han Ru-Qi,
来源：中国物理（英文版） 年份：2007
This paper reports that the high-K HfO2 gate dielectrics are fabricated on n-germanium substrates by sputtering Hf on Ge and following by a fuace annealing. The...
[期刊论文] 作者：Peng Ya-Hua,Liu Xiao-Yan,Du Gang,Liu Fei,Jin Rui,Kang Jin-Feng,
来源：中国物理B（英文版） 年份：2012
...
[期刊论文] 作者：ZENG Lang,XIN Zheng,CHEN Shao-Wen,DU Gang,KANG Jin-Feng,LIU Xiao-Yan,
来源：中国物理快报（英文版） 年份：2014
The dynamics of electron transport in single-layer MoS2 is simulated by employing the single particle Monte Carlo method.Acoustic phonon scattering,optical phon...
[期刊论文] 作者：SUN Bing,LIU Li-Feng,HAN De-Dong,WANG Yi,LIU Xiao-Yan,HAN Ru-Qi,KANG Jin-Feng,
来源：中国物理快报（英文版） 年份：2008
Ag-doped and pure ZrO2 thin films are prepared on Pt/Ti/SiO2/Si substrates by sol-gel process for resistive random access memory application. The highly reprodu...
[期刊论文] 作者：Xu Hong-Hua,Liu Xiao-Yan,He Yu-Hui,Fan Chun,Du Gang,Sun Ai-Dong,Han Ru-Qi,Kang Jin-Feng,
来源：中国物理B（英文版） 年份：2010
...
[期刊论文] 作者：Han De-Dong(韩德栋),Kang Jin-Feng(康晋锋),Lin Chang-Hai(林长海),Han Ru-Qi(韩汝琦),
来源：中国物理（英文版） 年份：2003
Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmo...
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