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[期刊论文] 作者：Weichao Wang,Cheng Gong,Ka Xiong,Santosh K.C.,Robert M.Wallace,Kyeongjae Cho,,
来源：Engineering 年份：2015
为了满足微电子器件不断扩展到更小尺寸的需求,SiO_2栅极介电层被高介电常量材料Hf(Zr)O_2所替代,以尽可能减少流过介电薄膜的漏电流。然而,与高介电常量(高κ)电介质连接时,...
[会议论文] 作者：Wei-Hua Wang,Weichao Wang,Kyeongjae Cho,Cheng Gong,Alan Seabaugh,Susan K.Fullerton-Shirey,
来源：中国物理学会2015年秋季会议 年份：2015
Graphene functionalization has been an important research topic in practical applications of electronic devices.Adsorption of molecules on graphene is an ef...
[会议论文] 作者：Wei-Hua Wang,Cheng Gong,Weichao Wang,Susan K.Fullerton-Shirey,Alan Seabaugh,Kyeongjae Cho,
来源：中国物理学会2015年秋季会议 年份：2015
Graphene functionalization has been an important research topic in practical applications of electronic devices.Adsorption of molecules on graphene is an effective route to achieve graphene novel func...
[会议论文] 作者：Wei-Hua Wang,Yaoqiao Hu,Changhong Wang,Hong Dong,Robert.M.Wallace,Kyeongjae Cho,Weichao Wang,
来源：中国物理学会2016年秋季会议 年份：2016
The III-V/high-k oxide has been regarded as one of the promising candidates in the next generation metal-oxide-semiconductor field effect transistors(MOSFET)due to its higher carrier mobility and high...
[期刊论文] 作者：Feng Lu,Jintao Cui,Pan Liu,Meichen Lin,Yahui Cheng,Hui Liu,Weichao Wang,Kyeongjae Cho,Wei-Hua Wang,
来源：中国物理B（英文版） 年份：2021
Low dimensional materials are suitable candidates applying in next-generation high-performance electronic,opto-electronic,and energy storage devices because of...
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