搜索筛选:
搜索耗时4.4181秒,为你在为你在102,285,761篇论文里面共找到 11 篇相符的论文内容
发布年度:
[期刊论文] 作者：LI Zhong-hui, ZHANG Yong-ming,
来源：高等学校化学研究：英文版 年份：2005
A supported iron catalyst, which was prepared by anchoring FeCl2/FeCl3 on the cross-linking macroporous polyacrylate ion exchange resin, was evaluated via the c...
Controlled Radical Polymerization of Methyl Methacrylate Catalyzed by Hybrid Supported Iron Catalyst
[期刊论文] 作者：LI Zhong-hui,ZHANG Yong-ming,X,
来源：高等学校化学研究（英文版） 年份：2004
A supported iron catalyst, which was prepared by anchoring FeCl2/FeCl3 on the cross-linking macroporous polyacrylate ion exchange resin, was evaluated via the c...
[期刊论文] 作者：Li Zhong-hui,Tong Zhong-hang,Luo Bang-yao,Cai Hou-ming,
来源：中华医学杂志英文版 年份：1986
...
[期刊论文] 作者：PAN Lei,NI Jin-Yu,YU Xin-Xin,DONG Xun,PENG Da-Qing,LI Chuan-Hao,LI Zhong-Hui,
来源：中国物理快报（英文版） 年份：2015
...
,Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with M
[期刊论文] 作者：Li Zhong-Hui,Yu Tong-Jun,Yang Zhi-Jian,Feng Yu-Chun,Zhang Guo-Yi,Guo Bao-Ping,Niu Han-Ben,
来源：中国物理（英文版） 年份：2005
InGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 70...
[期刊论文] 作者：CHEN Chen,JIANG Wen-Hai,REN Chun-Jiang,LI Zhong-Hui,JIAO Gang,DONG Xun,CHEN Tang-Sheng,
来源：中国物理快报（英文版） 年份：2007
We report on the fabrication and characterization of phototransistors based on AlGaN/GaN heterostructure grown over 6H-SiC substrates. The device has two functi...
,AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm-Thick Epilayers with the Max
[期刊论文] 作者：YU Xin-Xin,NI Jin-Yu,LI Zhong-Hui,KONG Cen,ZHOU Jian-Jun,DONG Xun,PAN Lei,
来源：中国物理快报（英文版） 年份：2014
We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors (HEMTs) grown on 4-inch silicon substrates.The HEMT structure includ...
[期刊论文] 作者：LI Zhong-hui,YANG Jin-hua,WU Gen-zhu,WANG Yu-xia,LI Mei,WANG Ling,ZHANG Xing-de,WANG Xiang-wu,
来源：城市道桥与防洪 年份：2000
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
,Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitti
[期刊论文] 作者：LI Zhong-Hui(李忠辉),YANG Zhi-Jian(杨志坚),QIN Zhi-Xin(秦志新),TONG Yu-Zhen(童玉珍),YU Tong-Jun(于彤军),LU Shu(陆曙),YANG,
来源：中国物理快报（英文版） 年份：2003
The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW)structure were grown by low-pressure metalorganic vapour phas...
,Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of In
[期刊论文] 作者：LI Zhong-Hui(李忠辉),YU Tong-Jun(于彤军),YANG Zhi-Jian(杨志坚),TONG Yu-Zhen(童玉珍),ZHANG Guo-Yi(张国义),FENG Yu-Chun,
来源：中国物理快报（英文版） 年份：2004
An InGaN multiple-quantum-well (MQW) violet-light-emitting diode (LED) is grown by low-pressure metalorganic chemical vapour deposition. It is found that photol...
[期刊论文] 作者：LU Min(陆敏),YANG Hua(杨华),LI Zi-Lan(黎子兰),YANG Zhi-Jian(杨志坚),LI Zhong-Hui(李忠辉),REN Qian(任谦),JIN Chun-Lai,
来源：中国物理快报（英文版） 年份：2003
The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet,etching of pits, x-ray diffraction and photolumines...
相关搜索：
