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,Effect of InxGa1-xN continuously graded buffer layer on InGaN epilayer grown by metalorganic chemic
[期刊论文] 作者：Qian Wei-Ning,Su Shi-Chen,Chen Hong,Ma Zi-Guang,Zhu Ke-Bao,He Miao,Lu Ping-Yuan,
来源：中国物理B（英文版） 年份：2013
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[期刊论文] 作者：Lu Ping-Yuan,Ma Zi-Guang,Su Shi-Chen,Zhang Li,Chen Hong,Jia Hai-Qiang,Jiang Yang,
来源：中国物理B（英文版） 年份：2013
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,The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111)Substrates by using MOC
[期刊论文] 作者：XU Pei-Qiang,JIANG Yang,MA Zi-Guang,DENG Zhen,LU Tai-Ping,DU Chun-Hua,FANG Yu-Tao,
来源：中国物理快报（英文版） 年份：2013
Owing to their superior intrinsic properties,GaNbased materials are very promising semiconductor materials for applications in optoelectronic devices,as well as...
[期刊论文] 作者：CHEN Yao,JIANG Yang,XU Pei-Qiang,MA Zi-Guang,WANG Xiao-Li,WANG Lu,JIA Hai-Qiang,CHEN Hong,
来源：中国物理快报（英文版） 年份：2011
The strain in GaN epitaxial layers grown on 611-SiC substrates with an AIN buffer by metalorganic chemical vapor deposition is investigated.It is found that the...
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