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[会议论文] 作者:Xiao-Li Ma,Xiao-Hua Cao, 来源:第三届认知科学北京国际研讨会暨第二届国际人脑发育会议 年份:2015
[会议论文] 作者:Xiao-Li Ma,Xiao-Hua Cao, 来源:中国科学院心理研究所,北京大学心理学系 年份:2015
Left-side bias(LSB) is an important hallmark in expertise processing that observers rely more heavily on information conveyed by left-side of the stimuli(from the viewers perspective).The goal of the...
[期刊论文] 作者:Ma Xiao-Hua,Cao Yan-Rong,Hao Yue, 来源:中国物理B(英文版) 年份:2010
This paper studies negative bias temperature instability (NBTI) under alteant and alteating current (AC)stress. Under alteant stress, the degradation smaller th...
[期刊论文] 作者:Liu Li,Yang Yin-Tang,Ma Xiao-Hua, 来源:中国物理B(英文版) 年份:2011
[期刊论文] 作者:Yang Ling,Ma Xiao-Hua,Feng Qian,Hao Yue, 来源:中国物理B(英文版) 年份:2008
In this paper, we have discussed the effect of electrical stress on GaN light emitting diode (LED). With the lapse of time, the LED with an applied large curren...
[期刊论文] 作者:Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Hu Shi-Gang, 来源:中国物理B(英文版) 年份:2010
[期刊论文] 作者:Ma Xiao-Hua,Cao Yan-Rong,Hao Yue,Zhang Yue, 来源:中国物理B(英文版) 年份:2011
[期刊论文] 作者:Quan si,Hao Yue,Ma xiao-Hua,Yu Hui-You, 来源:中国物理B(英文版) 年份:2011
[期刊论文] 作者:Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Tian Wen-Chao, 来源:中国物理B(英文版) 年份:2010
[期刊论文] 作者:Quan Si,Hao Yue,Ma Xiao-Hua,Yu Hui-You, 来源:中国物理B(英文版) 年份:2011
[期刊论文] 作者:Cao Yan-Rong,Hao Yue,Ma Xiao-Hua,Hu Shi-Gang, 来源:中国物理B(英文版) 年份:2009
The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage s...
[期刊论文] 作者:CAO Yan-Rong,HU Shi-Gang,MA Xiao-Hua,HAO Yue, 来源:中国物理快报(英文版) 年份:2008
Recovery phenomenon is observed under negative gate voltage stress which is smaller than the previous degradation stress. We focus on the drain current to study...
[期刊论文] 作者:YANG Ling,HAO Yue,ZHOU Xiao-Wei,MA Xiao-Hua, 来源:中国物理快报(英文版) 年份:2009
Elxtronic properties, surface chemistry and surface morphology of plasma-treated n-Alo.4Gao.6N material are studied by electrical contact measurements, atomic f...
[期刊论文] 作者:CAO Yan-nong,HAO Yue,MA Xiao-Hua,YU Lei, 来源:中国物理快报(英文版) 年份:2008
Negative bias temperature instability (NBTI) and stress-induced leakage current (SILC) both are more serious due to the aggressive scaling lowering of devices....
[期刊论文] 作者:QUAN Si,MA Xiao-Hua,ZHENG Xue-Feng,HAO Yue, 来源:中国物理快报(英文版) 年份:2013
AlGaN/GaN high electron mobility transistors (HEMTs)[1-3] are excellent candidates for high power switches,microwave amplifiers,and high temperature integrated...
[期刊论文] 作者:SUN Jing,WANG Hong,WANG Zhan,WU Shi-Wei,MA Xiao-Hua, 来源:中国物理快报(英文版) 年份:2015
The contact-size-dependent characteristic of cutoff frequency fT in bottom-contact organic thin film transistors (OTFTs) is studied.The effects of electrode thi...
[期刊论文] 作者:Ma Xiao-Hua,Hao Yue,Wang Jian-Ping,Cao Yan-Rong,Chen Hai-Feng, 来源:中国物理(英文版) 年份:2006
Hot carriers injection (HCI) tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices (75-90 nm), which does...
[期刊论文] 作者:Chen Hai-Feng,Hao Yue,Ma Xiao-Hua,Li Kang,Ni Jin-Yu, 来源:中国物理(英文版) 年份:2007
The hot-carrier degradation for 90 nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4 nm) gate oxide under the low gate voltage (LGV) (at Vg=...
[期刊论文] 作者:Zhang Yue,Zhuo Qing-Qing,Liu Hong-Xia,Ma Xiao-Hua,Hao Yue, 来源:中国物理B(英文版) 年份:2014
[期刊论文] 作者:Lei Xiao-Yi,Liu Hong-Xia,Zhang Yue,Ma Xiao-Hua,Hao Yue, 来源:中国物理B(英文版) 年份:2014
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