搜索筛选:
搜索耗时0.0943秒,为你在为你在102,285,761篇论文里面共找到 8 篇相符的论文内容
发布年度:
[期刊论文] 作者：ZHANG Wei(张玮),XU Ying-Qiang(徐应强),NIU Zhi-Chuan(牛智川),WU Rong-Han(吴荣汉),
来源：中国物理快报（英文版） 年份：2003
Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layer on the band structure, gain and differential gai...
[期刊论文] 作者：LIU Jin-Long(刘金龙),LI Shu-Shen(李树深),NIU Zhi-Chuan(牛智川),YANG Fu-Hua(杨富华),FENG Song-Lin(封松林),
来源：中国物理快报（英文版） 年份：2003
We study the oscillator strengths of the optical transitions of the vertically stacked self-assembled InAs quantum discs. The oscillator strengths change eviden...
[期刊论文] 作者：LIU Jin-Long(刘金龙),LI Shu-Shen(李树深),NIU Zhi-Chuan(牛智川),YANG Fu-Hua(杨富华),FENG Song-Lin(封松林),
来源：中国物理快报（英文版） 年份：2003
We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a verticall...
[期刊论文] 作者：GONG Zheng(龚政),FANG Zhi-Dan(方志丹),MIAO Zhen-Hua(苗振华),NIU Zhi-Chuan(牛智川),FENG Song-Lin(封松林),
来源：中国物理快报(英文版) 年份：2003
Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs Q WRs...
,Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substra
[期刊论文] 作者：Zhou Da-Yong(周大勇),Lan Qing(澜清),Kong Yun-Chuan(孔云川),Miao Zhen-Hua(苗振华),Feng Song-Lin(封松林),Niu Zhi-Chuan(牛智川,
来源：中国物理（英文版） 年份：2003
Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures.and the space period is around 40nm. The step arrays...
,Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination
[期刊论文] 作者：FANG Zhi-Dan(方志丹),GONG Zheng(龚政),MIAO Zhen-Hua(苗振华),XU Xiao-Hua(徐晓华),NI Hai-Qiao(倪海桥),NIU Zhi-Chuan(牛智川,
来源：中国物理快报（英文版） 年份：2003
Self-assembled InAs/GaAs quantum dots covered by the 1-nm InxAl(1-x)As(x = 0.2,0.3)and 3-nm In0.2Gao.8As combination strain-reducing layer are fabricated,whose...
,A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grow
[期刊论文] 作者：(孔云川),Zhou Da-Yong(周大勇),Lan Qing(澜清),Liu Jin-Long(刘金龙),Miao Zhen-Hua(苗振华),Feng Song-Lin(封松林),Niu Zhi-Chuan(牛智川,
来源：中国物理（英文版） 年份：2003
1.3μm emitting InAs/GaAs quantum dots (QDs) have been grown by molecular beam epitaxy and QD light emit ting diodes (LEDs) have been fabricated. In the electro...
[期刊论文] 作者：XU Xiao-Hua(徐晓华),NIU Zhi-Chuan(牛智川),NI Hai-Qiao(倪海桥),XU Ying-Qiang(徐应强),ZHANG Wei(张玮),HE Zheng-Hong(贺正宏,
来源：中国物理快报（英文版） 年份：2004
We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-xSbx/Iny Ga1-yAs)/GaAs bilayer quantum well (BQW) structures....
相关搜索：
