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[期刊论文] 作者：Pranav Kumar Asthana,,
来源：Journal of Semiconductors 年份：2015
We present a GaSb/In As junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a v...
A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low po
[期刊论文] 作者：Pranav Kumar Asthana,Yogesh Goswami,Bahniman Ghosh,,
来源：Journal of Semiconductors 年份：2016
We propose a nanoscale single gate ultra thin body intrinsic channel tunnel field effect transistor using the charge plasma concept for ultra low power applicat...
Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transisto
[期刊论文] 作者：Shibir Basak,Pranav Kumar Asthana,Yogesh Goswami,Bahniman Ghosh,,
来源：Journal of Semiconductors 年份：2014
We propose a dynamic threshold voltage junctionless tunnel FET(DT-JLTFET) in which the threshold voltage can be dynamically adjusted,resulting in higher ON-curr...
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