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Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characte
[期刊论文] 作者：D.S.RAWAL,B.K.SEHGAL,R.MURALIDHARAN,H.K.MALIK,,
来源：Plasma Science and Technology 年份：2011
A study of Cl2/BCl3-based inductively coupled plasma (ICP) was conducted usingthick photoresist mask for anisotropic etching of 50 μm diameter holes in a GaAs...
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