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[期刊论文] 作者：Panpan Wang,Songxuan Han,Ruge Quhe,
来源：半导体学报（英文版） 年份：2021
Owing to the high carrier mobility,two-dimensional (2D) gallium antimonite (GaSb) is a promising channel material for field-effect transistors (FETs) in the post-silicon era.We investigated the ballistic performance of the 2D GaSb metal-oxi......
,Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructur
[期刊论文] 作者：Shenyan Feng,Qiaoxuan Zhang,Jie Yang,Ming Lei,Ruge Quhe,
来源：中国物理B（英文版） 年份：2017
Tunneling field effect transistors (TFETs) based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect...
[期刊论文] 作者：Jing-Yun Bi,Li-Hong Han,Qian Wang,Li-Yuan Wu,Ruge Quhe,Peng-Fei Lu,
来源：中国物理B（英文版） 年份：2018
The electrical properties and thermoelectric (TE) properties of monolayer In-VA are investigated theoretically by combining first-principles method with Boltzma...
Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with
[会议论文] 作者：Zhigang Song,Ruge Quhe,Yan Li,Ji Feng,Jing Lu,Jinbo Yang,
来源：第八届全国磁性薄膜与纳米磁学会议 年份：2014
...
Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with
[会议论文] 作者：Zhigang Song,Ruge Quhe,Yan Li,Ji Feng,Jing Lu,Jinbo Yang,
来源：第八届全国磁性薄膜与纳米磁学会议 年份：2014
In this Letter,a tunable valley polarization is investigated for honeycomb systems with broken inversion symmetry such as transition-metal dichalcogenide MX2 (M...
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