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[期刊论文] 作者：H.Sattarian,Sh.Rahmatallahpur,T.Tohidi,
来源：中国物理B（英文版） 年份：2013
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Nanoscale potential barrier distributions and their effect on current transport in Ni/n type Si Scho
[期刊论文] 作者：M.Yeganeh,N.Balkanian,Sh.Rahmatallahpur,,
来源：Journal of Semiconductors 年份：2015
We have experimentally studied the Ni/n-Si nano Schottky barrier height(SBH) and potential difference between patches in the nano Schottky diodes(SD) using cont...
,Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au
[期刊论文] 作者：M.A.Yeganeha,Sh.Rahmatallahpur,A.Nozad,R.K.Mamedov,
来源：中国物理B（英文版） 年份：2010
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