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Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transisto
[期刊论文] 作者：Shibir Basak,Pranav Kumar Asthana,Yogesh Goswami,Bahniman Ghosh,,
来源：Journal of Semiconductors 年份：2014
We propose a dynamic threshold voltage junctionless tunnel FET(DT-JLTFET) in which the threshold voltage can be dynamically adjusted,resulting in higher ON-curr...
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