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[会议论文] 作者：Shingo Maruyama,Yuji Matsumoto,
来源：3rd International Symposium on Integrated Molecular/Material 年份：2008
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[会议论文] 作者：Yuji Matsumoto,Shingo Maruyama,
来源：3rd International Symposium on Integrated Molecular/Material 年份：2008
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[会议论文] 作者：Aomi Onuma,Shingo Maruyama,Shunta Harada,Toru Ujihara,Tomohisa Kato,Hajime Okumura,Kazuhisa Kurashige,
来源：2013 International Symposium on Integrated Molecular / Mater 年份：2013
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[会议论文] 作者：Aomi Onuma,Shingo Maruyama,Shunta Harada,Toru Ujihara,Tomohisa Kato,Kazuhisa Kurashige,Hajime Okumura,
来源：2013 International Symposium on Integrated Molecular / Mater 年份：2013
Silicon carbide (SiC) has properties suitable for high-power, high-frequency and high-temperature devices.Among its polythypes the cubic (3C) SiC-based MOSFET has attracted most attention due to its h...
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