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Nano Composite Microcapsules—Crystallinity and Thermal Stability
[期刊论文] 作者：SONG Qing-wen,XING Jian-wei,YA, 来源：东华大学学报（英文版） 年份：2004
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,Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky di
[期刊论文] 作者：Chen Feng-Ping,Zhang Yu-Ming,Zhang Yi-Men,Lu Hong-Liang,Song Qing-Wen, 来源：中国物理B（英文版） 年份：2010
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,Non-ideal effect in 4H-SiC bipolar junction transistor with double Gaussian-doped base
[期刊论文] 作者：Yuan Lei,Zhang Yu-Ming,Song Qing-Wen,Tang Xiao-Yan,Zhang Yi-Men, 来源：中国物理B（英文版） 年份：2015
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,Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier
[期刊论文] 作者：Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Chen Feng-Ping,Tang xiao-Yan, 来源：中国物理B（英文版） 年份：2011
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,Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift
[期刊论文] 作者：Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Zhang Qian,Lü Hong-Liang, 来源：中国物理B（英文版） 年份：2010
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,Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights
[期刊论文] 作者：Wang Yue-Hu,Zhang Yi-Men,Zhang Yu-Ming,Song Qing-Wen,Jia Ren-Xu, 来源：中国物理B（英文版） 年份：2011
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,Analytical model for reverse characteristics of 4H-SiC merged PN-Schottky (MPS) diodes
[期刊论文] 作者：Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Lu Hong-Liang,Chen Feng-Ping,Zheng Qing-Li, 来源：中国物理B（英文版） 年份：2009
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,Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer
[期刊论文] 作者：Zhang Qian,Zhang Yu-Ming,Yuan Lei,Zhang Yi-Men,Tang Xiao-Yan,Song Qing-Wen, 来源：中国物理B（英文版） 年份：2012
In this paper we report on a novel structure of a 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown.The measured dc comm...
,Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode
[期刊论文] 作者：Huang Jian-Hua,Lü Hong-Liang,Zhang Yu-Ming,Zhang Yi-Men,Tang Xiao-Yan,Chen Feng-Ping,Song Qing-Wen, 来源：中国物理B（英文版） 年份：2011
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,Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3) 1-x gate dielectrics on 4H-SiC
[期刊论文] 作者：Jia Ren-Xu,Dong Lin-Peng,Niu Ying-Xi,Li Cheng-Zhan,Song Qing-Wen,Tang Xiao-Yan,Yang Fei, 来源：中国物理B（英文版） 年份：2015
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,4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination
[期刊论文] 作者：Yuan Hao,Tang Xiao-Yan,Zhang Yi-Men,Zhang Yu-Ming,Song Qing-Wen,Yang Fei,Wu Hao, 来源：中国物理B（英文版） 年份：2014
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,Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked diele
[期刊论文] 作者：Tang Xiao-Yan,Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Jia Ren-Xu,Lü Hong-Liang,Wang Yue-Hu, 来源：中国物理B（英文版） 年份：2012
Atomic layer deposited (ALD) Al2O3/dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8° off-axis 4H-SiC (0001) epitaxial wafers are invest...
,Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with jun
[期刊论文] 作者：Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Zhang Qian,Guo Hui,Li Zhi-Yun,Wang Zhong-Xu, 来源：中国物理B（英文版） 年份：2010
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,The fabrication and characterization of 4H-SiC power UMOSFETs
[期刊论文] 作者：Song Qing-Wen,Zhang Yu-Ming,Han Ji-Sheng,Philip Tanner,sima Dimitrijev,Zhang Yi-Men,Tang Xiao-Yan, 来源：中国物理B（英文版） 年份：2013
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