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[期刊论文] 作者：Chang Cai,Tian-Qi Liu,Xiao-Yua,
来源：核技术:英文版 年份：2019
Single event effects of 1-T structure programmable read-only memory (PROM) devices fabricated with a 130-nm complementary metal oxide semiconductorbased thin/th...
[期刊论文] 作者：Xin Peng,Tian-qi Liu,Cong Shan,
来源：黑龙江科技学院学报 年份：2017
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7...
[期刊论文] 作者：Xin Peng,Tian-qi Liu,Cong Shang,Chen Jiao,汪辉亮,,
来源：Chinese Journal of Polymer Science 年份：2017
Simple preparation of stimuli-responsive hydrogels with good mechanical properties and mild stimuliresponsiveness is essential for their applications as smart s...
[期刊论文] 作者：Si-Yang Yao,Bin Liang,Yuan-Yuan Chen,Yun-Tian Tang,Xiao-Feng Dong,Tian-Qi Liu,
来源：世界临床病例杂志 年份：2021
BACKGROUND Hepatocellular carcinoma(HCC)is the second leading cause of cancer-related death worldwide,and has relatively high recurrence rates.Few studies have been published on the clinical stages of recurrent HCC.AIM To assess the applica......
Fabrication of h-MnO2@PDA composite nanocarriers for enhancement of anticancer cell performance by p
[期刊论文] 作者：Xue-ya ZHANG,Guo-hua JIANG,Gao SONG,Tian-qi LIU,Yan-fang SUN,Zhi-yong ZENG,
来源：材料学前沿 年份：2021
The development of functional nanocarriers with multi-functional ability and expected degradability is of great significance for efficient drug delivery on tumo...
[期刊论文] 作者：Zhen-Lei Yang,Xiao-Hui Wang,Hong Su,Jie Liu,Tian-Qi Liu,Kai Xi,Bin Wang,
来源：核技术（英文版） 年份：2016
...
Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC m
[期刊论文] 作者：Ze He,Shi-Wei Zhao,Tian-Qi Liu,Chang Cai,Xiao-Yu Yan,Shuai Gao,Yu-Zhu Liu,Jie Liu,
来源：核技术（英文版） 年份：2021
A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk com-plementary metal oxide semiconductor technology.The single event upset(SEU)cross sections ......
[期刊论文] 作者：Ya-Nan Yin,Jie Liu,Qing-Gang Ji,Pei-Xiong Zhao,Tian-Qi Liu,Bing Ye,Jie Luo,You-Mei Sun,Ming-Dong Hou,
来源：中国物理B（英文版） 年份：2018
The influences of total ionizing dose (TID) on the single event effect (SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper....
[期刊论文] 作者：Zhen-Lei Yang,Xiao-Hui Wang,Hong Su,Jie Liu,Tian-Qi Liu,Kai Xi,Bin Wang,Song Gu,Qian-Shun She,,
来源：Nuclear Science and Techniques 年份：2016
With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by r...
[期刊论文] 作者：Kai Xi,Di Jiang,Shan-Shan Gao,Jie Kong,Hong-Yun Zhao,Hai-Bo Yang,Tian-Qi Liu,Bin Wang,Bing Ye,Jie Liu,
来源：核技术（英文版） 年份：2017
We predict proton single event effect (SEE) error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer (DAMPE) to evaluate its radiation toleran...
[期刊论文] 作者：Jie Luo,Tie-shan Wang,Dong-qing Li,Tian-qi Liu,Ming-dong Hou,You-mei Sun,Jing-lai Duan,Hui-jun Yao,Kai,
来源：中国物理B（英文版） 年份：2018
Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devic...
[期刊论文] 作者：Bing Ye,Jie Liu,Tie-Shan Wang,Tian-Qi Liu,Jie Luo,Bin Wang,Ya-Nan Yin,Qing-Gang Ji,Pei-Pei Hu,You-Mei,
来源：中国物理B（英文版） 年份：2017
This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset (SEU) test in a commercial 65-nm static random ac...
,Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fus
[期刊论文] 作者：Chang Cai,Tian-Qi Liu,Xiao-Yuan Li,Jie Liu,Zhan-Gang Zhang,Chao Geng,Pei-Xiong Zhao,Dong-Qing Li,Bing,
来源：核技术（英文版） 年份：2019
Single event effects of 1-T structure pro-grammable read-only memory (PROM) devices fabricated with a 130-nm complementary metal oxide semiconductor-based thin/...
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