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,The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI
[期刊论文] 作者：CHANG Jian-Guang,WU Chun-Bo,JI Xiao-Li,MA Hao-Wen,YAN Feng,SHI Yi,ZHANG Rong,
来源：中国物理快报（英文版） 年份：2012
We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization impl...
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