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Effects of Electroacupuncture on Hippocampal and Cortical Apoptosis in A Mouse Model of Cerebral Isc
[期刊论文] 作者：ZHAO Jian-xin,TIAN Yuan-xiang,XIAO Hong-ling,HU Man-xiang,CHEN Wei-ran,
来源：中医杂志（英文版） 年份：2011
Objective: To observe the effects of electroacupuncture on hippocampal and cortical apoptosis in a mouse model of cerebral ischemia-reperfusion injury.Methods:...
[期刊论文] 作者：ZHANG Ming-Lan,WANG Xiao-Liang,XIAO Hong-Ling,WANG Cui-Mei,RAN Jun-Xue,HU Guo-Xin,
来源：中国物理快报（英文版） 年份：2008
AlGaN/GaN heterostructures have been irradiated by neutrons with different fluences and characterized by means of temperature-dependent Hall measurements and Mi...
[期刊论文] 作者：HOU Qi-Feng,WANG Xiao-Liang,XIAO Hong-Ling,WANG Cui-Mei,YANG Cui-Bai,LI Jin-Min,
来源：中国物理快报（英文版） 年份：2010
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[期刊论文] 作者：CUI Lei,WANG Quan,WANG Xiao-Liang,XIAO Hong-Ling,WANG Cui-Mei,JIANG Li-Juan,FENG Chun,
来源：中国物理快报（英文版） 年份：2015
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[期刊论文] 作者：LIU Shi-Ming,XIAO Hong-Ling,WANG Quan,YAN Jun-Da,ZHAN Xiang-Mi,GONG Jia-Min,WANG Xiao-Liang,
来源：中国物理快报（英文版） 年份：2015
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,Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunct
[期刊论文] 作者：YAN Jun-Da,WANG Quan,WANG Xiao-Liang,XIAO Hong-Ling,JIANG Li-Juan,YIN Hai-Bo,FENG Chun,
来源：中国物理快报（英文版） 年份：2015
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[期刊论文] 作者：WEI Meng,WANG Xiao-Liang,XIAO Hong-Ling,WANG Cui-Mei,PAN Xu,HOU Qi-Feng,WANG Zhan-Guo,
来源：中国物理快报（英文版） 年份：2011
A 2pm high quality crack-free GaN film was successfully grown on 2-inch Si(111)substrates by metal organic chemical vapor deposition with a high temperature AIN...
[期刊论文] 作者：JIANG Li-Juan,WANG Xiao-Liang,XIAO Hong-Ling,WANG Zhan-Guo,FENG Chun,ZHANG Ming-Lan,TANG Jian,
来源：中国物理快报（英文版） 年份：2009
The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are inves-tigated. XRD results do not show any peaks associated...
[期刊论文] 作者：KANG He,WANG Quan,XIAO Hong-Ling,WANG Cui-Mei,JIANG Li-Juan,FENG Chun,CHEN Hong,
来源：中国物理快报（英文版） 年份：2014
...
[期刊论文] 作者：LI Zhi-Dong,XIAO Hong-Ling,WANG Xiao-Liang,WANG Cui-Mei,DENG Qing-Wen,JING Liang,DING Jie-Qin,
来源：中国物理快报（英文版） 年份：2013
Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated,and an InGaN/GaN MQWs solar c...
,The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Sp
[期刊论文] 作者：WAN Xiao-Jia,WANG Xiao-Liang,XIAO Hong-Ling,WANG Cui-Mei,FENG Chun,DENG Qing-Wen,QU Shen-Qi,
来源：中国物理快报（英文版） 年份：2013
The valence band offset (VBO) of an Alo.17Ga0.83N/GaN heterojunction is determined to be 0.13 ± 0.07eV by x-ray photoelectron spectroscopy.From the obtained VB...
[期刊论文] 作者：Zhang Xiao-Bin,Wang Xiao-Liang,Xiao Hong-Ling,Yang Cui-Bai,Hou Qi-Feng,Yin Hai-Bo,Chen Hong,Wang Zhan-Guo,
来源：中国物理B（英文版） 年份：2011
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,Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structur
[期刊论文] 作者：GUO Lun-Chun,WANG Xiao-Liang,XIAO Hong-Ling,RAN Jun-Xue,Wang Cui-Mei,MA Zhi-Yong,LUO Wei-Jun,WANG Zhan-Guo,
来源：中国物理快报(英文版) 年份：2009
Electrical properties of AlyGa1-yN/AlxGa1-xN/AIN/GaN structure are investigated by solving coupled Schrodinger and Poisson equation self-consistently. Our calcu...
[期刊论文] 作者：HOU Qi-Feng,WANG Xiao-Liang,XIAO Hong-Ling,WANG Cui-Mei,YANG Cui-Bai,YIN Hai-Bo,LI Jin-Min,WANG Zhan-Guo,
来源：中国物理快报（英文版） 年份：2011
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,Growth and Characterization of AlGaN/AlN/GaN HEMT Structures with a Compositionally Step-Graded AlG
[期刊论文] 作者：MA ZHI-Yong,WANG Xiao-Liang,HU Guo-Xin,RAN Jun-Xue,XIAO Hong-Ling,LUO Wei-Jun,TANG Jian,LI Jian-Ping,,
来源：中国物理快报（英文版） 年份：2007
A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a Compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorga...
[期刊论文] 作者：WANG Xin-Hua,WANG Xiao-Liang,FENG Chun,XIAO Hong-Ling,YANG Cui-Bai,WANG Jun-Xi,WANG Bao-Zhu,RAN Jun-Xue,
来源：中国物理快报（英文版） 年份：2008
Pt/AlGaN/AlN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing.The Pt Schottky contact and the Ti/Al/Ni/Au ohmic contact are formed by e...
[期刊论文] 作者：FENG Chun,WANG Xiao-Liang,YANG Cui-Bai,XIAO Hong-Ling,ZHANG Ming-Lan,JIANG Li-Juan,TANG Jian,HU Guo-Xin,
来源：中国物理快报（英文版） 年份：2008
Pt Schottky diode gas sensors for CO are fabricated using AlGaN/GaN high electron mobility transistor (HEMTs) structure. The diodes show a remarkable sensor sig...
[期刊论文] 作者：WANG Bao-Zhu,WANG Xiao-Liang,HU Guo-Xin,RAN Jun-Xue,WANG Xin-Hua,GUO Lun-Chun,XIAO Hong-Ling,LI Jian-Ping,
来源：中国物理快报（英文版） 年份：2006
Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition (MOCVD).Rapid thermal annealing (RTA) treatments are carried out...
[期刊论文] 作者：DENG Qing-Wen,WANG Xiao-Liang,YANG Cui-Bai,XIAO Hong-Ling,WANG Cui-Mei,YIN Hai-Bo,HOU Qi-Feng,BI Yang,
来源：中国物理快报（英文版） 年份：2011
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