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[期刊论文] 作者：Xiaole CUI,Xiao MA,Feng WEI,Xiaoxin CUI,
来源：中国科学：信息科学（英文版） 年份：2020
Dear editor,rnResistive RAM (RRAM) based logic circuits have attracted much attention in recent years.The IMPLY (material implication) gates are the first publi...
[期刊论文] 作者：Xiaole CUI,Qiang ZHANG,Xiaoxin CUI,Xinan WANG,Jinfeng KANG,Xiaoyan LIU,,
来源：Science China(Information Sciences) 年份：2017
Dear editor,RRAM is regarded as one of the most promising candidates among emerging nonvolatile memory technologies[1,2].Recently,the 1Tn R RRAM structure,in wh...
[期刊论文] 作者：Kai LIAO,Xiaoxin CUI,Nan LIAO,Tian WANG,Dunshan YU,Xiaole CUI,,
来源：Science China(Information Sciences) 年份：2016
In this paper, we first reconstruct a novel planar static contention-free single-phase-clocked flipflop(S2CFF) based on high-performance fin-type field-effect t...
Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB t
[期刊论文] 作者：Tian Wang,Xiaoxin Cui,Yewen Ni,Kai Liao,Nan Liao,Dunshan Yu,Xiaole Cui,
来源：城市道桥与防洪 年份：2017
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Reliability evaluation of high-performance,low-power FinFET standard cells based on mixed RBB/FBB te
[期刊论文] 作者：Tian Wang,Xiaoxin Cui,Yewen Ni,Kai Liao,Nan Liao,Dunshan Yu,Xiaole Cui,,
来源：Journal of Semiconductors 年份：2004
With shrinking transistor feature size,the fin-type field-effect transistor(FinFET) has become the most promising option in low-power circuit design due to its...
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