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,Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor usin
[期刊论文] 作者：Yang Li-Yuan,Xue Xiao-Yong,Zhang Kai,Zheng Xue-Feng,Ma Xiao-Hua,Hao Yue,
来源：中国物理B（英文版） 年份：2012
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,Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the tra
[期刊论文] 作者：Liu Zi-Yang,Zhang Jin-Cheng,Duan Huan-Tao,Xue Jun-Shuai,Lin Zhi-Yu,Ma Jun-Cai,Xue Xiao-Yong,Hao Yue,
来源：中国物理B（英文版） 年份：2011
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[期刊论文] 作者：Xue Xiao-Yong,Xu Sheng-Rui,Zhang Jin-Cheng,Lin Zhi-Yu,Ma Jun-Cai,Liu Zi-Yang,Xue Jun-Shuai,Hao Yue,
来源：中国物理B（英文版） 年份：2012
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[会议论文] 作者：Hu Yi,Wu Yue,Kun-lun Tian,Dan Lan,Xiang-yun Chen,Ming-ying Xue,Xiao-yong Peng,Yu Zhu,Liang-ming Liu,Tao,
来源：The 6th China-Russia International Conference on Medicine(第六 年份：2014
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,Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and
[期刊论文] 作者：XU Sheng-Rui,LIN Zhi-Yu,XUE Xiao-Yong,LIU Zi-Yang,MA Jun-Cai,JIANG Teng,MAO Wei,WANG Dang-Hui,ZHANG Jin-Cheng,
来源：中国物理快报（英文版） 年份：2012
Nonpolar (11(2)0) and semipolar (11(2)2) GaN are grown on r-plane and m-plane sapphire by MOCVD to investigate the characteristics of basal plane stacking fault...
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