搜索筛选:
搜索耗时5.2642秒,为你在为你在102,285,761篇论文里面共找到 4 篇相符的论文内容
类      型:
[期刊论文] 作者:Sultan Ullah,Xuefeng Zheng,Fen, 来源:软件工程与应用(英文) 年份:2013
Cloud computing is a new paradigm of computing and is considered to be the next generation of information technology infrastructure for an enterprise. The distr...
[期刊论文] 作者:Duan Shuwei,Liu Shuwen,Sun Xuefeng,Zheng Ying,Liu Linchang,Yao Feixiang,Wu Jie, 来源:中华医学杂志英文版 年份:2014
[期刊论文] 作者:Haiyong WANG,Wei MAO,Shenglei ZHAO,Yuanhao HE,Jiabo CHEN,Ming DU,Xuefeng ZHENG,Chong WANG,Chunfu ZHANG, 来源:中国科学:信息科学(英文版) 年份:2022
Dear editor,rnGaN-on-Si high electron mobility transistors(HEMTs)have attracted attention for power device applications due to their low cost and large-area availability[1].Recently,bidirectional switches are highly desirable in many indus-......
[会议论文] 作者:Yunlong He,何云龙,Chong Wang,王冲,Xuefeng Zheng,郑雪峰,Xiaohua Ma,马晓华,Jincheng Zhang,张进城,Yue Hao,郝跃, 来源:第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份:2012
  F等离子体刻蚀在AlGaN/GaN异质结的高电子迁移率晶体管(HEMT)栅场板结构的栅槽刻蚀工艺中广泛采用,F等离子的栅槽过刻蚀时间对HEMTs特性的影响值得关注。实验对比了SiN棚...
相关搜索: