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[期刊论文] 作者:Huifang Xu,Yuehua Dai,, 来源:Journal of Semiconductors 年份:2017
A two-dimensional analytical model of double-gate(DG) tunneling field-effect transistors(TFETs) with interface trapped charges is proposed in this paper. The in...
[期刊论文] 作者:Yuehua DAI,Yi SHI,Yong QI,Jianbao REN,Peiiian WANG, 来源:城市道桥与防洪 年份:2013
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者:Jin Yang,Yuehua Dai,Shibin Lu,Xianwei Jiang,Feifei Wang,Junning Chen,, 来源:Journal of Semiconductors 年份:2017
The physical mechanism of the resistance switching for RRAM with co-doped defects(Ag and oxygen vacancy)is studied based on the first principle calculations and...
[会议论文] 作者:Li Yanjuan,Wang Jing,Tian Yongshu,Li Yuehua,Dai Lei,Wang Ling, 来源:第十四届国际锂电池会议(The 14th International meeting on lithium Batter 年份:2008
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