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,Structural, Morphological and Electrical Properties of In-Doped Zinc Oxide Nanostructure Thin Films
[期刊论文] 作者：R.Perumal,Z.Hassan,R.Saravanan,
来源：中国物理快报（英文版） 年份：2016
...
HIGH PERFORMANCE InGaN LASER DIODE WITH AN IMPROVED CARRIER CONFINEMENT USING AlGaN/GaN MULTI-QUANTU
[会议论文] 作者：S.M.Thahab;H.AbuHassan;Z.Hassan;,
来源：International Meeting on Frontiers of Physics 2009(第三届国际物理前沿 年份：2009
...
Structural,Morphological and Electrical Properties of In-Doped Zinc Oxide Nanostructure Thin Films G
[期刊论文] 作者：R.Perumal,Z.Hassan,R.Saravanan,,
来源：Chinese Physics Letters 年份：2016
Zinc oxide(ZnO) is one of the most promising and frequently used semiconductor materials.In-doped nanostructure ZnO thin 61 ms are grown on p-type gallium nitri...
[期刊论文] 作者：S.M.Thahab,H.AbuHassan,Z.Hassan,
来源：ChineseOpticsLetters 年份：2009
The effect of quantum well number on the quantum efficiency and temperature characteristics of InGaN/GaN laser diodes (LDs) is determined and investigated. The 3-nm-thick In_{0.13}Ga_{0.87}N wells and two 6-nm-thick GaN barriers are selecte......
[期刊论文] 作者：S.M.Thahab,H.Abu Hassan,Z.Hassan,,
来源：Chinese Optics Letters 年份：2009
The effect of quantum well number on the quantum efficiency and temperature characteristics of InGaN/GaN laser diodes(LDs) is determined and investigated.The 3-...
HIGH PERFORMANCE InGaN LASER DIODE WITH AN IMPROVED CARRIER CONFINEMENT USING AlGaN/GaN MULTI-QUANTU
[会议论文] 作者：S.M.Thahab,H.Abu Hassan,Z.Hassan,
来源：International Meeting on Frontiers of Physics 2009(第三届国际物理前沿 年份：2009
...
[期刊论文] 作者：Asmiet RAMIZY,Z.HASSAN,Khalid OMAR,,
来源：Science China Technological Sciences 年份：2011
Porous silicon (PS) was fabricated by laser-induced etching (LIE) process. The objective of this study is to investigate the selected LIE parameters to control...
A study of the operating parameters and barrier thickness of Al_(0.08)In_(0.08)Ga_(0.84)N/Al_xIn_yGa
[期刊论文] 作者：A.J.GHAZAI,S.M.THAHAB,H.ABU HASSAN,Z.HASSAN,,
来源：Science China Technological Sciences 年份：2011
The operating parameters such as the internal quantum efficiency (ηi),internal loss (αi) and transparent threshold current density (J0) of double quantum well...
LACK and TSA gene of Leishmania major cloned in eukaryotic expression vector could increase survival
[会议论文] 作者：F.Ghaffarifar,H.D.Asl,Z.Hassan,S.Ghasemi,O.Jorjani,F.Tabatabaie,Z.Sharifi,F.Khoshzaban,
来源：The 5th Ditan International Conference on Infectious Disease 年份：2011
...
LACK and TSA gene of Leishmania major cloned in eukaryotic expression vector could increase survival
[会议论文] 作者：F.Ghaffarifar,O.Jorjani,F.Tabatabaie,Z.Sharifi,H.D.Asl,Z.Hassan,F.Khoshzaban,S.Ghasemi,
来源：The 5th Ditan International Conference on Infectious Disease 年份：2011
...
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