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,Influence of Polarization-Induced Electric Field on Subband Structure in AlxGa1-xN/GaN Double Quant
[期刊论文] 作者：LEI Shuang-Ying,SHEN Bo,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2006
The influence of the polarization-induced electric field and other parameters on the subband structure in AlxGa1-xN/GaN coupled double quantum wells (DQWs)has b...
[期刊论文] 作者：LEI Shuang-Ying,SHEN Bo,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2006
Dependences of anticrossing gaps between pairs of subbands in Alx Ga1-x N/GaN double quantum wells (DQWs) on the width and the Al composition of the central bar...
[期刊论文] 作者：LEI Shuang-Ying,SHEN Bo,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2008
Influence of width of lett well in Alx Ga1-x N/GaN double quantum wells (DQWs) on absorption coefficients and wavelengths of the intersubband transitions (ISBTs...
,Effects of transverse mode coupling and optical confinement factor on gallium-nitride based laser d
[期刊论文] 作者：Jin Xiao-Ming,Zhang Bei,Dai Tao,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2008
We have investigated the transverse mode patte and the optical field confinement factor of gallium nitride (GaN) laser diodes (LDs) theoretically. For the parti...
,Optimization of a solar-blind and middle infrared two-colour photodetector using GaN-based bulk mat
[期刊论文] 作者：Cen Long-Bin,Shen Bo,Qin Zhi-Xin,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2009
...
,Influence of applied electric field on the absorption coefficient and subband distances in asymmetr
[期刊论文] 作者：Cen Long-Bin,Shen Bo,qin Zhi-Xin,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2009
...
[期刊论文] 作者：Wu Jie-Jun,Wang Kun,Yu Tong-Jun,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2015
...
[期刊论文] 作者：Lu Jia-Ning,Yu Jie,Tong Yu-Zhen,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2012
...
,Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscop
[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2005
The composition, elastic strain and structural defects of InGaN/GaN multiple quantum wells (MQWs) are comparatively investigated by using x-ray diffraction (XRD...
,Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN f
[期刊论文] 作者：Zhao Lu-Bing,Yu Tong-Jun,Wu Jie-Jun,Yang Zhi-Jian,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2010
...
[期刊论文] 作者：Li Tao,Qin Zhi-Xin,Xu Zheng-Yu,Shen Bo,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2011
...
[期刊论文] 作者：Zhong Can-Tao,Yu Tong-Jun,Yan Jian,Chen Zhi-Zhong,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2013
...
,Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical va
[期刊论文] 作者：Xing Hai-Ying,Xu Zhang-Cheng,Cui Ming-Qi,Xie Yu-Xin,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2014
...
[期刊论文] 作者：ZHOU Jing,YANG Zhi-Jian,XU Shi-Fa,ZHU Xing,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2001
A thin film of GaN with the thickness of 1.0μm was grown on α-Al2Oa substrate by metal organic chemical vapour disposition and then a thick GaN film with thic...
,Microstructure Study on Heterostructures of AlInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Ch
[期刊论文] 作者：WANG Huan,YAO Shu-De,PAN Yao-Bo,YU Tong-Jun,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2006
A quateary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with a thick (＞ 1 μm) GaN intermediate layer....
[期刊论文] 作者：Tao Ren-Chun,Yu Tong-Jun,Jia Chuan-Yu,Chen Zhi-Zhong,Qin Zhi-Xin,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2009
Strain effects on the polarized optical properties of c-plane and m-plane InxGa1-xN were discussed for different In compositions (x = 0, 0.05, 0.10, 0.15) by an...
[期刊论文] 作者：RUAN Jun,YU Tong-Jun,JIA Chuan-Yu,TAO Ren-Chun,WANG Zhan-Guo,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2009
...
,Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with M
[期刊论文] 作者：Li Zhong-Hui,Yu Tong-Jun,Yang Zhi-Jian,Feng Yu-Chun,Zhang Guo-Yi,Guo Bao-Ping,Niu Han-Ben,
来源：中国物理（英文版） 年份：2005
InGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 70...
[期刊论文] 作者：Liu Fang,Qin Zhi-Xin,Xu Fu-Jun,Zhao Sheng,Kang Xiang-Ning,Shen Bo,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2011
...
[期刊论文] 作者：SANG Li-Wen,QIN Zhi-Xin,CEN Long-Bin,CHEN Zhi-Zhong,YANG Zhi-Jian,SHEN Bo,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2007
Al0.2Ga0.sN/GaN samples are grown by metalorganic chemical vapour deposition (MOCVD) method on (0001) sapphire substrates. A 10nm-thick Ni layer is deposited on...
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