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[期刊论文] 作者:YANG Xiu-ying,ZHAO Jin-cheng, 来源:哈尔滨工业大学学报(英文版) 年份:2011
For the research on steel structure in fire, it is very important to determine the properties of structural steel at elevated temperature.Up to now, the high-te...
[期刊论文] 作者:SHANG Chun-yu,ZHAO Jin-cheng, 来源:上海交通大学学报(英文版) 年份:2008
A novel tuned liquid damper (TLD) rectangular tank with two angle-adjustable baffles was presented. The numerical analysis was performed using the commercial co...
[期刊论文] 作者:QIU Guo-zhi,ZHAO Jin-cheng, 来源:上海交通大学学报(英文版) 年份:2009
[期刊论文] 作者:XU Ji-xiang,ZHAO Jin-cheng,DUAN Hai-juan, 来源:上海交通大学学报(英文版) 年份:2013
[期刊论文] 作者:WANG Zhao-qiang,ZHAO Jin-cheng,GONG Jing-hai, 来源:上海交通大学学报(英文版) 年份:2012
[期刊论文] 作者:YANG Xiu-ying,ZHAO Jin-cheng,GONG Jing-hai, 来源:上海交通大学学报(英文版) 年份:2010
[期刊论文] 作者:GONG Jing-hai,YANG Xiu-ying,ZHANG Zi-zhao,ZHAO Jin-cheng, 来源:上海交通大学学报(英文版) 年份:2010
[期刊论文] 作者:JIN Meng,ZHAO Jin-cheng,CHANG Jing,LIU Ming-lu, 来源:上海交通大学学报(英文版) 年份:2011
[期刊论文] 作者:Da-Peng Zhao,Jin-Cheng Tang,He-Min Nie,Yuan Zhang,Yu-Kai Chen,Xu Zhang,Hui-Xing Li,Ming Yan, 来源:稀有金属(英文版) 年份:2018
One of the critical issues in the development of novel metallic biomaterials is the design and fabrication of metallic scaffolds and implants with hierarchical...
[期刊论文] 作者:Chun-Xu Su,Wei Wen,Wu-Xiong Fei,Wei Mao,Jia-Jie Chen,Wei-Hang Zhang,Sheng-Lei Zhao,Jin-Cheng Zhang,Yue, 来源:中国物理B(英文版) 年份:2021
The key parameters of vertical A1N Schottky barrier diodes (SBDs) with variable drift layer thickness (DLT) and drift layer concentration (DLC) are investigated...
[期刊论文] 作者:Ruo-Han Li,Wu-Xiong Fei,Rui Tang,Zhao-Xi Wu,Chao Duan,Tao Zhang,Dan Zhu,Wei-Hang Zhang,Sheng-Lei Zhao,Jin-Cheng, 来源:中国物理B(英文版) 年份:2021
The threshold voltage (Vth) of the p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) is inves-tigated via Silvaco-Atlas simulations.The mai...
[期刊论文] 作者:Yun Jiang,Si-Wei Ji,Shi-Wei Dong,Wei-Wei Chen,Xiao-Hong Tan,Jin-Long Li,Xiao-Jun Li,Sheng-Lei Zhao,Jin-Cheng, 来源:中国物理B(英文版) 年份:2020
A large gate metal height technique is proposed to enhance breakdown voltage in GaN channel and AlGaN channelhigh-electron-mobility-transistors (HEMTs). For GaN...
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