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[期刊论文] 作者：ZHANG Zhi-Bin,XU Hong-Jie,ZHU De-Zhang,ZHANG Shi-Li,
来源：核技术(英文版) 年份：2001
Annealing behavior, at different annealing temperatures, of an ultrathin Mo layer located between a Ti film and Si substrate or deposited on the top of surface...
[期刊论文] 作者：LI Qin-Tao,LI Zhi-Gang,XIE Qiao-Ling,GONG Jin-Long,ZHU De-Zhang,
来源：中国物理快报（英文版） 年份：2009
Controlled evolution of silicon nanocone arrays induced by Ar+ sputtering at room temperature, using the coating carbon as a mask, is demonstrated. The investig...
,Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor
[期刊论文] 作者：CHEN Chang-chun,YU Ben-hai,LIU Jiang-feng,CAO Jian-qing,ZHU De-Zhang,
来源：核技术（英文版） 年份：2005
Thin strain-relaxed Si0.81Ge0.19 films (95 nm) on the Ar+ ion implanted Si substrates with different energies (30 keV, 40 keV and 60 keV) at the same implanted...
[期刊论文] 作者：ZHENG Li-Ping,XU Zi-Jian,WANG Cheng-Bin,ZHU Zhi-Yuan,ZHU De-Zhang,XIA Hui-Hao,
来源：中国物理快报（英文版） 年份：2006
Monte Carlo simulation is used to study the low energy He ion channelling in a (17,0) single-wall nanotube and its rope. The simulation shows that the channelli...
[期刊论文] 作者：LIU Hua-Ming,ZHANG Zhi-Bin,CHEN Changchun,WANG Sen,ZHU De-Zhang,XU Hong-Jie,
来源：核技术(英文版) 年份：2002
Investigations on surface decomposition of GaN implanted with low energy (80 keV) Eu ion to a low dose (l×1014 cm-2), and its annealing behavior under high tem...
[期刊论文] 作者：ZHANG Jing-Ping,CHEN Chang-chun,LIU Jing-Hua,ZHU De-Zhang,XIE Dong-Zhu,PAN Hao-Chang,
来源：核技术(英文版) 年份：2000
The oxidation of Si0. sGeo.5 alloy has been investigated at the temperatures of 800℃ and 900 ℃. Rutherford backscattering spectroscopy has been employed to de...
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