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[期刊论文] 作者：Li Dong-Lin,Zeng Yi-Ping,
来源：中国物理（英文版） 年份：2006
We have carried out a theoretical study of double-δ-doped InAlAs/InGaAs/InP high electron mobility transistor (HEMT) by means of the finite differential method...
[期刊论文] 作者：DING Kai,ZENG Yi-Ping,
来源：中国物理快报（英文版） 年份：2008
Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping.A commonly used a...
,Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tu
[期刊论文] 作者：Zhang Yang,Zhang Yu,Zeng Yi-Ping,
来源：中国物理B(英文版) 年份：2008
This paper studies the dependence of Ⅰ - Ⅴ characteristics on quantum well widths in AlAs/In0.53Ga0.47As and AlAs/In0.53Ga0.47As/InAs resonant tunnelling stru...
[期刊论文] 作者：WU Meng,ZENG Yi-Ping,WANG Jun-Xi,HU Qiang,
来源：中国物理快报（英文版） 年份：2011
A low-temperature GaN (LT-GaN) nucleation layer is grown on a patteed sapphire substrate (PSS) using metal- organic chemical vapor deposition (MOCVD).The surfac...
,Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with
[期刊论文] 作者：LIN Guo-Qiang,ZENG Yi-Ping,WANG Xiao-Liang,LIU Hong-Xin,
来源：中国物理快报（英文版） 年份：2008
Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy(GSMBE) with ammonia. The thickness of AlN buffer i...
,Observation of the current-voltage plateau-like structure of resonant tunnelling diode with prewell
[期刊论文] 作者：Zhang Xiao-Xin,Zeng Yi-Ping,Qiu Zhi-Jun,Wang Bao-Qiang,Zhu Zhan-Ping,
来源：中国物理（英文版） 年份：2004
We have grown resonant tunnelling diodes (RTDs) with different sized emitter prewells and without a prewell. The current-voltage (Ⅰ-Ⅴ) characteristics of them...
,Relationship between the electric performance and the photoluminescence spectra of resonant tunnell
[期刊论文] 作者：Zhang Xiao-Xin,Zeng Yi-Ping,Wang Xiao-Guang,Wang Bao-Qiang,Zhu Zhan-Ping,
来源：中国物理（英文版） 年份：2004
Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum...
[期刊论文] 作者：Gao Hong-Ling,Zeng Yi-Ping,Wang Bao-Qiang,Zhu Zhan-Ping,Wang Zhan-Guo,
来源：中国物理B（英文版） 年份：2008
A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/Ⅲ flux ratios are grown on GaAs (001) substrates by molecular beam epitax...
[期刊论文] 作者：CUI Jun-Peng,WANG Xiao-Feng,DUAN Yao,HE Jin-Xiao,ZENG Yi-Ping,
来源：中国物理快报（英文版） 年份：2008
A 5.35-μm-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film i...
[期刊论文] 作者：HUANG Ying-Long,MA Long,YANG Fu-Hua,WANG Liang-Chen,ZENG Yi-Ping,
来源：中国物理快报（英文版） 年份：2006
AlGaAs/InGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epita...
[期刊论文] 作者：GAO Hai-Yong,YAN Fa-Wang,ZHANG Yang,LI Jin-Min,ZENG Yi-Ping,
来源：中国物理快报(英文版) 年份：2008
ZnO nanoflowers are synthesized on AlN films by solution method.The synthesized nanoflowers are composed of nanorods,which are pyramidal and grow from a central...
,Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer an
[期刊论文] 作者：Cao Guo-Hua,Qin Da-Shan,Guan Min,Cao Jun-Song,Zeng Yi-Ping,Li Jin-Min,
来源：中国物理B（英文版） 年份：2008
Organic light emitting diodes employing magnesium doped electron aceeptor 3,4,9,10 perylenetetracarboxylic dianhydride (Mg:PTCDA) as electron injection layer an...
,Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In
[期刊论文] 作者：Zhang Yang,Han Chun-Lin,Gao Jian-Feng,Zhu Zhan-Ping,Wang Bao-Qiang,Zeng Yi-Ping,
来源：中国物理B（英文版） 年份：2008
This paper investigates the dependence of current-voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes (RTDs) on spacer layer thicknes...
The performance enhancement in organic light-emitting diode using a semicrystalline composite for ho
[期刊论文] 作者：Cao Jun-Song,Guan Min,Cao Guo-Hua,Zeng Yi-Ping,Li Jin-Min,Qin Da-Shan,
来源：中国物理B（英文版） 年份：2008
A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride (PTCDA) doped N, N’-di (1-naphthyl)-N, N’-diphenylbenzidine (NPB), has been fabri...
[期刊论文] 作者：MA Long,HUANG Ying-Long,ZHANG Yang,WANG Liang-Chen,YANG Fu-Hua,ZENG Yi-Ping,
来源：中国物理快报（英文版） 年份：2006
We report a resonant tunnelling diode (RTD) small signal equiwlent circuit model consisting of quantum capacitance and quantum inductance. The model is verified...
[期刊论文] 作者：GAO Hai-Yong,YAN Fa-Wang,FAN Zhong-Chao,LI Jin-Min,ZENG Yi-Ping,WANG Guo-Hong,
来源：中国物理快报（英文版） 年份：2008
p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present...
[期刊论文] 作者：CAO Jun-Song,GUAN Min,CAO Guo-Hua,ZENG Yi-Ping,LI Jin-Min,QIN Da-Shan,
来源：中国物理快报(英文版) 年份：2008
Bright organic electroluminescent devices axe developed using a metal-doped organic layer intervening between the cathode and the emitting layer.The typical dev...
[期刊论文] 作者：CAO Guo-Hua,QIN Da-Shan,GUAN Min,CAO Jun-Song,ZENG Yi-Ping,LI Jin-Min,
来源：中国物理快报（英文版） 年份：2007
Organic light emitting diodes with an interface of organic acceptor 3-,4-,9-,10-perylenetetracarboxylic dianhydride (PTCDA) and donor copper phthalocyanine (CuP...
[期刊论文] 作者：WEI Tong-Bo,MA Ping,DUAN Rui-Fei,WANG Jun-Xi,LI Jin-Min,ZENG Yi-Ping,
来源：中国物理快报（英文版） 年份：2007
Thick GaN films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The optical and structura...
[期刊论文] 作者：崔军朋,段垚,王晓峰,曾一平,ZENG Yi-ping,
来源：发光学报 年份：2004
采用化学气相沉积(CVD)方法在Si(001)衬底上分别制备了有金属Au缓冲层以及无Au缓冲层的ZnO薄膜.其中Au缓冲层在物理气相沉积(PVD)设备中蒸发,厚度大约为300 nm.有Au缓冲层的Z...
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