AlGaNGaNHEMTs相关论文
氮化镓材料作为第三代宽禁带半导体的代表材料之一,具有高热导率、高击穿场强、高电子迁移率等优秀的特性,GaN HEMT器件被广泛应用......
An atomic-level controlled etching (ACE) technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-e......
我们采用电子束光刻和干法刻蚀的手段实现了纳米沟道阵列AlGaN/GaN HEMTs。普通结构器件的阈值电压在-3.65V,而沟道宽度缩小至66nm......
Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high ele
The role of the oxygen in AlGaN/GaN high electron mobility transistors(HEMTs)before and after semi-on state stress was d......
In this paper,we investigated the effect of post-gate annealing(PGA)on reverse gate leakage and the reverse bias reliabi......
为了优化传统AlGaN/GaN high electron mobility transistors结构表面电场分布,提高器件击穿电压和可靠性,本文利用不影响AlGaN/Ga......
以GaN为代表的宽禁带化合物半导体材料,在微波大功率等应用领域表现出有出色的性能,成为越来越多研究工作者们关注的焦点。在过去......
基于第三代半导体的材料优势,AlGaN/GaN高电子迁移率晶体管(HEMT)在微波通信、电力控制、雷达航天等领域应用潜力巨大。欧姆接触是......
