INSULATOR相关论文
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The configure of insulator is more complex than that of conductors, and the ice shape and distribution on the surface of......
The environmental parameters can be controlled and the ice test is not limited by season in the artificial climate chamb......
A well-established method is highly desirable for growing topological insulator thin films with low carrier density on a......
Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal t
Atomically thin two-dimensional(2D) materials are the building bricks for next-generation electronics and optoelectronic......
Tunable Work Function Of Graphene By Nickel-Assisted In-Situ Boron Doping For Direct Synthesis On In
Doping of graphene provides an efficient way to spread out the band-gap and alter the work function necessary to imp......
Conductor strenuous exercise will be caused by the ice-shedding. It is easy to cause the occurrence of electrical or......
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Hexagonal warping effect on Majorana zero modes at the ends of superconducting vortex lines in doped
In a superconducting topological insulator, a superconducting vortex line can trap a one-dimensional topological band wi......
Investigation of the thermal conductivities across metal-insulator transition in polycrystalline VO_
Previous reports about the thermal conductivities of VO2 showed various temperature dependences across metal-insulator t......
Effect of oxygen pressure on electrical transport properties for(110) oriented La_(2/3)Sr_(1/3)MnO_3
La2/3Sr1/3MnO3 films with(110) preferred orientation were deposited on Si(100) substrate without any buffer layer by pul......
Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-dep......
With the support by the National Natural Science Foundation of China and the Ministry of Science and Technology of China......
Electro-catalytic role of insulator/conductor interface in Mg O/PEDOT composite electrodes for dye-s
Mg O has not been explored as a counter electrode materials for dye-sensitized solar cells(DSSCs)due to its lack of elec......
A new rubidium europium polyphosphate,RbEu(PO_3)_4,was synthesized by the high-temperature solution reaction and studied......
Bi_2Se_3, as a three-dimensional topological insulator, has attracted worldwide attention for its unique surface states ......
In last decades,topological materials[1-3]have attracted lots of research interest.Topological Kondo insulator(TKI)[4],a......
We study the electronic and magnetic properties of an oxygen-deficient perovskite Ca_2 Mn_2 O_5 based on the first princ......
1 Intensity Distribution Measurement of Large Diameter and High Energy KrF Laser Beam Feng Qi Gong Kun Li Jing Shan ......
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Silicon-on-insulator1 × 2Y-junctionOpticalSwitchBasedonWaveguide-vanishingEfect①②ZHAOCezhou (Microelectron......
The silicon-on-insulator(SOI) 1 × 2 Y-junction optical waveguide switch has been proposed and fabricated, which is base......
本文提出了采用有限元法分析SOI(Silicon on Insulator)结构M-Z(Mach-Zehnder)干涉型调制器的新方法。该方法在大截面单模SOI脊形......
H＋离子注入Si片并经一定条件退火，可在Si片中形成埋层微空腔（microcavity）层，结合Si片键合技术，用智能剥离（Smart－cut）技术成功地制备了Unib......
We have measured the deep energy level of the InP: Fe which is semi -insulator through the method of OTCS. The effect of......
Terahertz(THz) frequency region, defined from0.1 to 10 THz, is an important frequency band for radio astronomy and atmos......
The enhancement mode GaN metal|insulator|semiconductor field effect transistor (E|MISFET) is successfully fabricated on ......
SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed with standard method and multiple......
No.1 The Status and Trends of Display Devices Tong Linsu( 1 )…………………………………Transparent Conductive Oxide Dope......
We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on s......
MEBMemory Expansion Board存储器扩充板MEMSMicro Electro Mechanical Systems微机电系统，微电子机械系统MESManufacturing Execut......
Epitaxial monocrystalline silicon film was grown on the porous silicon using ultra high vacuum electron beam evaporatio......
期刊
The hot-carrier-induced oxide regions in the front and back interfaces are systemati-cally studied for partially deplet......
Forward gated-diode Recombination-Generation(R-G) current method is appliedto an NMOSFET/SOI to measure the stress-indu......
Self heating effects in silicon on insulator (SOI) devices limit the applicability of SOI materials in electronics in......
X-FAB半导体加工厂（位于德国的Erfurt）宣布开发成功了一种新的混合信号的SOI（绝缘层上硅,silicon-on-insulator）工艺技术。这种工艺适......
IBM和赛灵思公司近日宣布双方在合作生产90纳米芯片方面迈出了重要一步,这将可能是全球第一块90纳米芯片。利用IBM公司最先进的基......
据《电子与封装》2002年Vol.41,No.8上面报道,东芝公司现已成功地开发出一种在SOI(Siliconon Insulacor)圆片上制作DRAM单元及其......
An inherent self-heating effect of the silicon-on-insulator (SOI) devices limits their application at high current Ieve......
SOI(Silicon on Insulator)指绝缘体上的硅技术,是为适应航空航天电子需求而发展起来的高新技术。近年来,随着信息技术高速发展,......
通过局域注氧工艺 ,在同一管芯上制作了 DSOI、体硅和 SOI三种结构的器件 .通过测量和模拟比较了这三种结构器件的热特性 .模拟和......
MOS器件的自加热效应将影响器件的性能 .漏极电流将减小 ,长时间的可靠性也会受到影响 .在SOI器件中 ,自加热甚至比埋葬式氧化物引......
The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5......
Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communicat......
CMOS开关已经引起了从事RF设计的工程师们的关注,其中的原因是多方面的。首先,CMOS开关价格低廉,同时其结构简洁并且没有双电压控......
制备了一种新型抗辐照SOI隔离结构,它包含了薄SiO2/多晶硅/SiO2多层膜.利用这种结构制备的SOI器件在经受3×105rad(Si)的辐照后亚......
