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本文利用ADS(advanced design system)软件建立了太赫兹肖特基二极管的SDD(symbolically-defined device)模型。该模型基于肖特基二极管的半导体理论,采用方程的形式来描述端口的特性。仿真得到的I-V曲线与实测结果有很高的吻合度,C-V曲线也与理论预测一致,最后将该SDD模型应用到一个140-160GHz理想平衡式二倍频器中,仿真得到的效率大于76.5%。当用与之参数一致的ADS自带的spice(simulation program with integrated circuit emphasis)模型代替后,二者的仿真结果具有很高的一致性。这说明了该SDD模型的准确性。相对于一般的spice模型,该SDD二极管模型的优势是结构简单、灵活性高,可根据用户需要灵活调整所有的方程和参数。
In this paper, SDS (symbolically-defined device) model of terahertz Schottky diode is built by using ADS (advanced design system) software. The model is based on the semiconductor theory of Schottky diodes and describes the characteristics of the ports in the form of equations. The simulated IV curve has a good agreement with the measured results, and the CV curve is consistent with the theoretical prediction. Finally, the SDD model is applied to a 140-160GHz ideal balanced double frequency multiplier, and the simulation efficiency is greater than 76.5% . When the spice (simulation program with integrated circuit emphasis) model with the same parameters of ADS is replaced, the simulation results of the two are highly consistent. This shows the accuracy of the SDD model. Compared with the general spice model, the SDD diode model has the advantages of simple structure and high flexibility, and all equations and parameters can be flexibly adjusted according to user needs.