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介绍了锑化铟磁阻型光电传感器的结构及工作原理,并对锑化铟磁阻型光电传感器的输出特性进行了研究;随着间隙由0 mm 增至5 mm,放大后的光电传感器输出电压峰峰值由3 v多急剧下降至500 mV以下;若使输入光脉冲电压的频率保持50 Hz 不变,改变红外发光二极管输入光脉冲电压(变化范围 V_(PP)为3.8～5.0 V),测量磁阻型光电传感器输出电压峰值 V_(PP)随输入光脉冲电压的增加按指数规律增加;磁阻型光电传感器的中心频率为50 Hz,通频带为46～55 Hz,即通频带宽度为9 Hz,可得其品质因数 Q 为5.56。
The structure and working principle of indium antimonide magnetoresistive photosensor are introduced. The output characteristics of indium antimonide magnetoresistive photosensor are studied. With the gap increasing from 0 mm to 5 mm, the amplified photosensor output The peak-to-peak voltage drops sharply from 3 v to less than 500 mV. If the input optical pulse voltage is maintained at 50 Hz, the input pulse voltage of the infrared LED (V PP) is changed from 3.8 V to 5.0 V, The peak value of the output voltage of the reluctance photoelectric sensor, V_ (PP), increases exponentially with the increase of the input pulse voltage. The center frequency of the reluctance photoelectric sensor is 50 Hz and the passband is 46~55 Hz. The passband is 9 Hz, you can get the quality factor Q 5.56.