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As a new type of storage device,resistive random access memory(RRAM)is attracting much attention,but the physical mechanism of RRAM is poorly understood,and the performance of the corresponding device also needs further improvement.Methods for RRAM research are mostly based on the macroscopic characteristics instead of the microscopic ones at nanometer scale.As a powerful tool for researching the microscopic properties of materials,scanning probe microscopy(SPM)can be used for the study of RRAM.