【摘 要】
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At present, significant research effort around the globe is now being devoted to reducing production costs while maintaining the brightness and efficiency of GaN based devices.Since the first demonstr
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At present, significant research effort around the globe is now being devoted to reducing production costs while maintaining the brightness and efficiency of GaN based devices.Since the first demonstration of GaN-based LEDs on fus ed-silica glass substrates by high temperature MO CVD in 2011, the development of GaN-based material on glass substrates have been regarded as perfect solution for significant cost reductions of GaN-based solid-state [1].
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