论文部分内容阅读
Enhanced optical power and low forward voltage of GaN-based LEDs with Ga-doped ZnO transparent conta
【机 构】
:
R & D center for semiconductor lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beij
【出 处】
:
第六届国际氧化锌及相关材料研讨会
【发表日期】
:
2010年4期
其他文献
Effects of annealing ambience on structure and optical-electrical properties of ZnO thin films codop
会议
High temperature enhanced Al diffusion from sapphire substrate into ZnO grown by Metalorganic Chemic
会议
The property and stability of Ag doped p-type ZnO thin films prepared by electrostatic-enhanced ultr
会议
The inference of substrate temperature on p-ZnO thin films prepared by electrostatic-enhanced ultras
会议
会议
The inorganic-organic hybrid junction with n-ZnO nanorods/p-polyfluorene structure grown with low-te
会议