高效、低能耗电子束熔炼提纯多晶硅过程探讨

来源 :第八届中国太阳级硅及光伏发电研讨会 | 被引量 : 0次 | 上传用户:shshay
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  电子束熔炼可以有效地去除多晶硅中的挥发性杂质,是冶金法制备太阳能级多晶硅的关键环节.本研究通过建立电子束熔炼的传热学模型,在不同的熔炼工艺参数条件下,进行了硅熔体温度场变化情况的数值模拟,并对其进行了分析讨论.在此基础上,结合磷的挥发去除过程来分析熔炼参数对硅基体的挥发损失以及综合能耗的影响.结果表明熔池表面的温度与电子束功率近似成线性关系,并随着功率的增加和扫描半径的减小而升高.在实验室条件下,对于0.5kg 的硅料,其中的磷含量从1.44×10-2wt.%降低到1×10-5wt.%所消耗的能量随着扫描半径的减小和功率的增加而降低,最佳的熔炼参数为功率23.4kW、扫描半径3.39cm.
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