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在不同剂量率的60Coγ辐照下，研究了PMOS剂量计阈值电压的响应关系。借助快速I—V亚阈分析技术，获得了辐射感生界面态对剂量率效应的贡献。结果表明，辐照响应有较明显的剂量率效应；主要表现为响应的拟合关系式△VT＝KDn中幂n的变化，在低剂量率区间内，n值较大，对应于辐射响应高灵敏度范围；当剂量率增大时，n值减小，响应灵敏度下降。讨论了克服剂量率效应影响其应用的办法。
Under different dose rates of 60Coγ irradiation, the response of PMOS dosimeter threshold voltage was studied. With the rapid I-V subthreshold analysis technique, the contribution of the radiation induced interface states to the dose rate effect is obtained. The results show that the radiation response has a more obvious dose-rate effect, which is mainly represented by the fitting relation of response △ VT = the change of power n in KDn. In the low-dose rate interval, the value of n is larger, corresponding to the high radiation response Sensitivity range; when the dose rate increases, the value of n decreases, the response sensitivity decreases. Discusses ways to overcome the effects of dose rate effects on their use.