this paper presents our effort in studying the failure prognostics of multichipIGBT modules，and a simple practical approach is introduced，which uses the deviations ofpeak gate charge current after partial bond wires lift—off due to thermal cycling as precursorparameters to evaluate the heath state of IGBT modules．To explore the electrical responsechange of gate driver circuit on account of the local damage occurred inside an IGBT module，acircuit model of gate driver loop considering stray parameters is built up，and a simple chopperexperimental platform is developed with an open sample which partial bond wires are lifted offmanually on purpose is adopted The results of analysis and experiment show that theconsiderable deviations of gate current can enable development of a prognostic approach formultichip IGBT modules．