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5. Atomic-Layer-Deposited Aluminum Oxide for the surface passivation of p-type Emitter realized by liqu

Atomic-Layer-Deposited Aluminum Oxide for the surface passivation of p-type Emitter realized by liqu

来源 :第一届国际ALD应用大会暨第二届中国ALD学术交流会 | 被引量 : 0次 | 上传用户：hhejiang

【摘 要】

：

The dependence of surface recombination velocity on aluminum oxide(Al2O3)films for liquid source of boron bromide(BBr3)diffused P+emitter was investigated.Different boron surface concentration and emi

【作 者】

：

Yehua Tang Chunlan Zhou Wenjing Wang Yan Zhao Su Zhou Jianming Fei Hongbin Cao 

【机 构】

：

Institute of Electrical Engineering,Key Laboratory of Solar Thermal Energy and Photovoltaic System,C

【出 处】

：

第一届国际ALD应用大会暨第二届中国ALD学术交流会

【发表日期】

：

2012年4期

【关键词】

：

Boron diffusion Boron bromide p-type emitter Atomic-Layer-Deposition Aluminum ox 

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　　The dependence of surface recombination velocity on aluminum oxide(Al2O3)films for liquid source of boron bromide(BBr3)diffused P+emitter was investigated.Different boron surface concentration and emitter depth were realized by altering doping temperatures from 850 to 980 ℃.

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