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Type-Ⅱ InAs/GaSb superlattices (T2SLs) have recently garnered significant interest and are now considered to be a potential alternative to HgCdTe technology in the long wavelength infrared (LWIR) detection regime.But the free carrier absorption of GaSb substrate and minority carrier diffusion length greatly influenced the quantum efficiency of Type-Ⅱ InAs/GaSb superlattices detectors, especially in Long Wavelength Infrared Detectors.