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利用HL-1装置的等离子体辐照研究了石墨基体上的TiC、SiC涂层和壁碳化。对辐照前后的样品进行俄歇电子能谱(AES)、扫描电镜(SEM),X射线光电子谱(XPS)和X射线衍射谱(XDS)分析。结果表明,TiC和SiC材料应用于孔栏和壁涂层以及壁碳化有利于减少金属重杂质和氧杂质水平,提高了等离子体品质。
The TiC, SiC coating and wall carbonization on graphite substrate were studied by plasma irradiation of HL-1 device. The samples before and after irradiation were analyzed by AES, SEM, XPS and XDS. The results show that the application of TiC and SiC materials in the hole columns and wall coatings and wall carbonization can reduce heavy metal impurities and oxygen impurities and improve the plasma quality.