AuSn/Au Eutectic bonding is one of the key technology to deliver next generation high power LEDs in view of its low thermal resistance and scale of production.Both Fluxless and Flux Eutectic bonding processes are currently applied in LED industries,with challenges on former method having VF instability and long term reliability concern due to LED chip long exposure under high temperature (>300℃) during bonding,and the later having higher manufacturing cost with addition process steps on reflow and flux cleaning,as well as flux residues and voids affecting performance and reliability.In ETI,we have developed a clean fluxless AuSn eutectic bonding process with low bonding voids (<10%) at AuSn/Au interfaces with robust reliability.Low thermal resistance at < 3.5 K/W and >6000-hours reliability with <0.2V VF and <3% flux degradation were achieved for a 3535 ceramic package product.In this presentation,an investigation on the current available LED chip bonding technologies will be analyzed and compared in term of performance and manufacturability.An introduction to ETI’s LED bonding technology and performance will be examined based on real life applications,followed by the next technology roadmap.